Hui Wang
Professor
Phone:
86-21-54747244
Email:
huiwang@sjtu.edu.cn
Office:
Room 805, Physics Building, SJTU
Research Interests
New photoelectric effect and new photoelectric materials,
Spin electronics materials and devices
Biographical Sketch
Prof. Hui Wang, received his PhD from Fudan University, and finished his postdoctoral research in Francis Bitter Magnet Lab of MIT. His current interests mainly focus on new photoelectric effect and new photoelectric materials, including spin electronics materials and devices. In recent years, Prof. Wang has published over 30 papers at Advanced Materials, IEEE Electron Device Letters, New Journal of Physics, Applied Physics Letters, Optics Letters, Optics Express. Many of his researches were supported by the National Natural Science Foundation of China.
Publication
- S. Liu, C. Q. Yu, and H. Wang* , “Colossal lateral photovoltaic effect observed in metal-oxide-semiconductor structure of Ti/TiO2/Si”, IEEE Electron Device Letters, Volume 33 , Issue: 3,414-416 (2012)
- T. Lan, S. Liu, and H. Wang*, “Enhanced lateral photovoltaic effect observed in CdSe quantum dots embedded structure of Zn/CdSe/Si”, Opt. Letters 36, 25-27 (2011).
- L. Du, and H. Wang*, “Large irreversible lateral photovoltaic effect in Cu2O/Si heteroepitaxial junction”, IEEE Electron Device Letters, VOL. 32, NO. 4, 539-541 (2011).
- C. Q. Yu and H. Wang*, “Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si”, Adv. Mater. 22, 966-970 (2010).
- C. Q. Yu and H. Wang*, “Bias-induced offset effect overlapped on bipolar-resistance effect based on Co/SiO2/Si structure”, Appl. Phys. Lett. 97, 041105 (2010).
- C. Q. Yu and H. Wang*, “Improved metal-semiconductor position detector with oscillating lateral photovoltaic effect”, Opt. Letters 34, 3770-3772 (2009).
- C. Q. Yu, and H. Wang*, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si”, Appl. Phys. Lett. 95, 263506 (2009).
- H. Wang*, S. Q. Xiao, C. Q. Yu, Y. X. Xia, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal-oxide-semiconductor structure”, N. J. Phys. 10, 093006 (2008).
- S. Q. Xiao, H. Wang*, “A novel position-sensitive detector based on metal-oxide-semiconductor structures of Co-SiO2-Si”, N. J. Phys. 10, 033018 (2008).
