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Controllable Synthesis of High Quality Graphene for Electronic Applications via Chemical Vapor Deposition

Abstract

Controllability in graphene synthesis is essential for high performance electronics application. One of the most promising methods to synthesis graphene is chemical vapor deposition (CVD). Challenges associated with the growth of graphene films in CVD approach include the better controllability over several important parameters: the number of layer, the size of single crystalline, lower growth temperature, and spatial lattice orientation. In this talk, we review our recent progress in the control synthesis of the graphene films. We report a simple but efficient strategy to synthesis large-area, single-crystalline graphene by controlling the supply of carbon source in chemical vapor deposition process at very low temperature. We also emphasize the importance of the growth condition and rational design of the metallic catalyst substrate for the realization of the homogenous thickness of graphene films. Finally, we discuss a chemical vapor deposition method that allows the direct synthesis of graphene in self-oriented assembly. The approaches presented here provide a nice controllability, and enables the possibility for large graphene single crystal, which is of vital importance for practical applications. Raman spectroscopy, transmission electron microscopy and electrical transport measurement show that the graphene we obtained are in high quality. Our work opens a new platform for the graphene based nanoelectronics and optoelectronics.